STGB19NC60KDT4 دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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STGB19NC60KDT4
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حجم فایل
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57.607
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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26
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مشخصات فنی
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RoHS:
true
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Type:
-
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Category:
Triode/MOS Tube/Transistor/IGBTs
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Datasheet:
STMicroelectronics STGB19NC60KDT4
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Operating Temperature:
-55°C~+150°C@(Tj)
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Collector Current (Ic):
35A
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Power Dissipation (Pd):
125W
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Input Capacitance (Cies@Vce):
-
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Turn?on Switching Loss (Eon):
0.165mJ
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Pulsed Collector Current (Icm):
75A
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Turn?off Switching Loss (Eoff):
0.255mJ
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Diode Reverse Recovery Time (Trr):
31ns
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Collector-Emitter Breakdown Voltage (Vces):
600V
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Gate-Emitter Threshold Voltage (Vge(th)@Ic):
-
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Package:
D2PAK
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Manufacturer:
STMicroelectronics
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Series:
PowerMESH™
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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IGBT Type:
-
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Voltage - Collector Emitter Breakdown (Max):
600V
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Current - Collector (Ic) (Max):
35A
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Current - Collector Pulsed (Icm):
75A
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Vce(on) (Max) @ Vge, Ic:
2.75V @ 15V, 12A
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Power - Max:
125W
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Switching Energy:
165µJ (on), 255µJ (off)
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Input Type:
Standard
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Gate Charge:
55nC
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Td (on/off) @ 25°C:
30ns/105ns
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Test Condition:
480V, 12A, 10Ohm, 15V
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Reverse Recovery Time (trr):
31ns
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Mounting Type:
Surface Mount
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Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Supplier Device Package:
D2PAK
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Base Part Number:
STGB19
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detail:
IGBT 600V 35A 125W Surface Mount D2PAK
